JPH0228892B2 - - Google Patents

Info

Publication number
JPH0228892B2
JPH0228892B2 JP58129211A JP12921183A JPH0228892B2 JP H0228892 B2 JPH0228892 B2 JP H0228892B2 JP 58129211 A JP58129211 A JP 58129211A JP 12921183 A JP12921183 A JP 12921183A JP H0228892 B2 JPH0228892 B2 JP H0228892B2
Authority
JP
Japan
Prior art keywords
substrate
film
boron
boron film
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58129211A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6021529A (ja
Inventor
Yasukazu Seki
Noritada Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Corporate Research and Development Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Corporate Research and Development Ltd filed Critical Fuji Electric Corporate Research and Development Ltd
Priority to JP58129211A priority Critical patent/JPS6021529A/ja
Publication of JPS6021529A publication Critical patent/JPS6021529A/ja
Publication of JPH0228892B2 publication Critical patent/JPH0228892B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP58129211A 1983-07-15 1983-07-15 ほう素膜形成方法 Granted JPS6021529A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58129211A JPS6021529A (ja) 1983-07-15 1983-07-15 ほう素膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58129211A JPS6021529A (ja) 1983-07-15 1983-07-15 ほう素膜形成方法

Publications (2)

Publication Number Publication Date
JPS6021529A JPS6021529A (ja) 1985-02-02
JPH0228892B2 true JPH0228892B2 (en]) 1990-06-27

Family

ID=15003877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58129211A Granted JPS6021529A (ja) 1983-07-15 1983-07-15 ほう素膜形成方法

Country Status (1)

Country Link
JP (1) JPS6021529A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6358823A (ja) * 1986-08-29 1988-03-14 Toshiba Corp 半導体装置の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125634A (en) * 1979-03-23 1980-09-27 Nissan Motor Co Ltd Production of silicon dioxide film

Also Published As

Publication number Publication date
JPS6021529A (ja) 1985-02-02

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